SEMICONDUCTOR STORAGE DEVICE

摘要

A semiconductor storage device provided can increase a write margin and suppress increase of a chip area. The semiconductor storage device includes plural memory cells arranged in a matrix; plural bit-line pairs arranged corresponding to each column of the memory cells; a write driver circuit which transmits data to a bit-line pair of a selected column according to write data; and a write assist circuit which drives a bit line on a low potential side of the bit-line pair of a selected column to a negative voltage level. The write assist circuit includes first signal wiring; a first driver circuit which drives the first signal wiring according to a control signal; and second signal wiring which is coupled to the bit line on the low-potential side and generates a negative voltage by the driving of the first driver circuit, based on inter-wire coupling capacitance with the first signal wiring.

主权项

1. A semiconductor storage device comprising:
a plurality of memory cells arranged in a matrix; a plurality of bit-line pairs arranged corresponding to each column of the memory cells; a write driver circuit operable to transmit data to a bit-line pair of a selected column according to write data; and a write assist circuit operable to drive a bit line on a low potential side of the bit-line pair of the selected column to a level of a negative voltage, wherein the write assist circuit comprises: first signal wiring; a first driver circuit operable to drive the first signal wiring according to a control signal; and second signal wiring coupled to the bit line on the low potential side and operable to generate the negative voltage by the driving of the first driver circuit, based on inter-wire coupling capacitance with the first signal wiring.