| 摘要 |
In the present invention, a step for forming a silicon carbide substrate (10) includes: a step in which a first impurity region (12) having a first conductivity type is formed by epitaxial growth; a step in which periodically provided embedded regions (17) are formed by performing ion implantation on the first impurity region, said embedded regions (17) having a second conductivity type different to the first conductivity type; and a step in which a second impurity region (13) is formed by epitaxial growth, said second impurity region (13) having the second conductivity type, having a lower concentration of impurities than the embedded regions (17), and being in contact with the first impurity region (12) and the embedded regions (17). Trenches (TR) are formed at the same periodicity as the embedded regions (17), and each trench (TR) has: sides (SW) that penetrate the second impurity region (13) and a third impurity region (14), and reach the first impurity region (12); and a bottom (BT) that is connected to the sides. Thus provided are a silicon carbide semiconductor device in which the on-resistance can reduced and the breakdown voltage can be increased, and a method for manufacturing said silicon carbide semiconductor device. |
