发明名称 STATIC RANDOM ACCESS MEMORY AND DRIVING METHOD THEREFOR
摘要 A static random access memory comprises: a pre-charge unit for supplying a pre-charge voltage to first and second bit lines connected to a bit cell; a capacitor of which one terminal or the other terminal is selectively connected to a ground terminal; a clamping unit for regulating the voltage level of a bit line by selectively connecting the bit line with the capacitor; and a MUX unit which is included in a unit memory cell comprising the bit cell, the pre-charge unit, the capacitor and the clamping unit, and which activates the bit line of the unit memory cell upon receiving a selection signal, wherein the clamping unit connects the first and second bit lines with the capacitor according to a charge sharing control signal to thereby induce charge sharing of the first and second bit lines and the capacitor.
申请公布号 WO2015147587(A1) 申请公布日期 2015.10.01
申请号 WO2015KR03032 申请日期 2015.03.27
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 PARK, JONG SUN;CHOI, WOONG
分类号 G11C11/417;G11C11/413 主分类号 G11C11/417
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