NITRIDE SEMICONDUCTOR, METHOD FOR FORMING TEXTURE STRUCTURE OF NITRIDE SEMICONDUCTOR, AND TEXTURE STRUCTURE OF NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide: a nitride semiconductor, a texture structure of which is formed in a film-forming apparatus for film-forming a GaN layer; a method for forming a texture structure of a nitride semiconductor; and a texture structure of a nitride semiconductor.SOLUTION: In a nitride semiconductor 10, boron nitride scattered on a surface of a p-GaN layer 16 is grown to form BN 18, and the p-GaN layer 16 is regrown, and thereby a recessed part is formed in a BN 18 non-existing region (boron nitride absence part) to form a texture structure 16b.