| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for enhancing the uniformity of film thickness between substrates, while reducing the operation labor and time of an apparatus, when performing deposition by carrying a holder, holding a plurality of substrates in a shelf-shape, in a reaction vessel and then supplying process gas in the reaction vessel.SOLUTION: An apparatus is constituted to include a gas supply section for supplying film-forming gas in a reaction vessel, and gas distribution regulation members provided to be located above and below the arrangement regions of a plurality of processed substrates held on a substrate holder, and composed of quartz. The value(S/S0) is set to 0.8 or more, where S is the surface area per unit region in the gas distribution regulation member, and S0 is the surface area per unit region obtained by dividing the surface area of the processed substrate by the surface area obtained based on the external dimension of the processed substrate. |
