IIIA-VA GROUP SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND METHOD FOR PREPARING SAME

摘要

An IIIA-VA group semi-conductor single crystal substrate (2) has one of or both of the following two properties: the content of oxygen in the range from the surface of the wafer to a depth of 10 μm ranges from 1.6×1016 atoms/cm3 to 5.6×1017 atoms/cm3, and an electron mobility ranges from 4,800 cm2/V·S to 5,850 cm2/V·S. Further, a method for preparing the semi-conductor single crystal substrate (2) comprises: placing a to-be-processed single crystal substrate (2) in a container (4); sealing the container (4), and keeping the to-be-processed single crystal substrate (2) in a temperature range in which the crystalline melting point is from −240° C. to −30° C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000° C. to 1,200° C. for 5 hours to 20 hours.

主权项

1. A IIIA-VA group semi-conductor single crystal substrate, having one of or both of the following two properties:
an oxygen content of 1.6×1016-5.6×1017 atoms/cm3 in a range from the surface to a depth of 10 μm of the wafer; and an electron mobility of 4,800 cm2/V·S to 5,850 cm2/V·s, preferably 4,900 to 5,800 cm2/V·s.