| 摘要 |
To enable the formation of a high-quality thin film while greatly mitigating damage to a substrate due to the collision therewith of ions generated in plasma as well as contamination of a substrate by sputtering on the inner wall of a processing chamber. Plasma is generated by electron cyclotron resonance using a mirror magnetic field (MF) and a microwave (MW), the plasma (PL) is closed off in a prescribed closed region (PCR) by the mirror magnetic field (MF), and a wafer (W) is arranged opposite the closed region (PCR) in a direction (D1, D2) crossing lines of magnetic force passing through the closed region (PCR) such that activated neutral radicals selectively reach the wafer (W) to be processed from the closed region (PCR). |
