ELECTRICITY STORAGE DEVICE AND METHOD FOR MANUFACTURING ELECTRICITY STORAGE DEVICE

摘要

An electricity storage device (100) includes a first electrode (20), a second electrode (50), an electricity storage layer (30), and a p-type semiconductor layer (40). The electricity storage layer (30) is placed between the first electrode (20) and the second electrode (50). The electricity storage layer (30) contains a mixture of an insulating material and n-type semiconductor particles. The p-type semiconductor layer (40) is placed between the electricity storage layer (30) and the second electrode (50). The n-type semiconductor particles contain at least one of a titanium-niobium composite oxide and a titanium-tantalum composite oxide.