FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A flash memory device and a method for fabricating the same are provided to prevent oxidation of a sidewall of a metal gate by protecting a side of the metal gate with a low temperature oxide layer. A gate dielectric(120a) is formed on a semiconductor substrate(122a). The gate dielectric traps a carrier tunneled from the semiconductor substrate. The gate dielectric has a first width. A metal electrode(200a) is formed on the gate dielectric. A voltage required for the tunneling is applied to the metal electrode. The metal electrode has a second width smaller than the first width. A sidewall spacer(210a) surrounds a side of the metal electrode. The sidewall spacer prevents oxidization of the metal electrode. The gate dielectric includes silicon oxide(SiOx) formed on the semiconductor substrate, silicon nitride(SiN) formed on the silicon oxide, and aluminum oxide(AlOx) formed on the silicon nitride. The sidewall spacer is a low temperature oxide layer which is formed below the temperature of which the metal electrode is oxidized.