| 摘要 |
PROBLEM TO BE SOLVED: To provide an inexpensive field effect transistor and its manufacturing method, in which a moisture prevention process around a gate by thick film lamination of a moisture-proof insulating film is performed, and an increase of gate capacitance is suppressed. SOLUTION: The field effect transistor in which a T orΓtype gate electrode, a drain electrode and a source electrode are arranged on a semiconductor layer through a semiconductor region doped in n-type has an insulating film whose thickness is 50 nm or less covering the circumference of the above gate electrode and the surface of the semiconductor layer, a silicon nitride film covering the above insulating film deposited by catalyst CVD method, wherein a cavity is formed by the above silicon nitride film between the portion corresponding to the cover of the opened umbrella of the above gate electrode and the above semiconductor layer. COPYRIGHT: (C)2008,JPO&INPIT
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