POLISHING METHOD OF GROUP III-V NITRIDE SEMICONDUCTOR SUBSTRATE AND GROUP III-V NITRIDE SEMICONDUCTOR SUBSTRATE OBTAINED BY THAT METHOD

摘要

PROBLEM TO BE SOLVED: To provide a polishing method of a group III-V nitride semiconductor substrate which can manufacture a group III-V nitride semiconductor substrate exhibiting performance sufficient for use in a device only by polishing, and to provide the group III-V nitride semiconductor substrate obtained by the method. SOLUTION: In a method for polishing a group III-V nitride semiconductor substrate by using slurry, the slurry contains a substance having chemical potential sufficient for unbonding an ionic bond of a molecule composing the group III-V nitride semiconductor substrate. COPYRIGHT: (C)2008,JPO&INPIT