| 摘要 |
Electrode plates ( 52, 54 ) acting as a heat sink are arranged to sandwich a power transistor (Q 1 ) and a diode (D 1 ). Electrode plates ( 52, 54 ) at their surfaces opposite cooling elements ( 62, 64 ) at a portion opposite power transistor (Q 1 ) and diode (D 1 ) are formed to be smaller in thickness at a portion adjacent to power transistor (Q 1 ) and diode (D 1 ) substantially at the center than at a periphery. Cooling elements ( 62, 64 ) are disposed geometrically along electrode plates ( 52, 54 ) to sandwich electrode plates ( 52, 54 )
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