| 摘要 |
A nonvolatile semiconductor memory includes a plurality of memory cells each configured to store M bits of data, where M is an integer greater than 1. In addition, the memory includes a selection circuit configured to select a first or second mode according to an instruction from outside of the nonvolatile semiconductor memory, and a program circuit configured to program M bits of data into each memory cell in the first mode, and N bits of data into each memory cell in the second mode, where N is an integer less than M. A selection pin may receive a voltage as the instruction from outside the memory indicating the first or second mode. Further, each of the memory cells may be assigned N different page addresses in the first mode and M different page addresses in the second mode.
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