Flash memory device and method for manufacturing the same

摘要

A flash memory device includes a semiconductor substrate, a gate insulating layer having a first width formed on the semiconductor substrate to trap carriers tunneled from the semiconductor substrate and a metal electrode on the gate insulating layer to receive a voltage required for tunneling. The metal electrode having a second width smaller than the first width. The flash memory device further includes a sidewall spacer surrounding a side surface of the metal electrode to prevent oxidation of the metal electrode.