ALIGNED CRYSTALLINE SEMICONDUCTING FILM ON A GLASS SUBSTRATE AND METHODS OF MAKING

摘要

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 75O0C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam depostion, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.