| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve heat dissipation properties of a semiconductor device, in which a plurality of semiconductor chips are encapsulated. <P>SOLUTION: A power MOSFET chip 2 for control is arranged on an input-side platy lead section 5; and a drain terminal DT1 is formed on the rear face of the chip, while a source terminal ST1 and a gate terminal GT1 are formed on the principal surface; and the source terminal ST1 and a source plate-like lead portion 12 are connected. A power MOSFET chip 3 for synchronization is arranged on an output-side plate-like lead section 6; and a drain terminal DT2 is formed on the rear face of the chip; the output-side plate-like lead section 6 is connected to the drain terminal DT2; a source terminal ST2 and a gate terminal GT2 are formed on the principal surface of the power MOSFET chip 3 for synchronization; and the source terminal ST2 and a source plat-like lead portion 13 are connected; and due to the source plate-like lead portions 12, 13 being exposed, heat dissipation properties of MCM1 can be enhanced. <P>COPYRIGHT: (C)2008,JPO&INPIT |
