发明名称 PLASMA PROCESSING EQUIPMENT, ITS OPERATION METHOD, PLASMA PROCESSING METHOD AND MANUFACTURING METHOD OF ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a technique capable of cleaning deposits inside a processing chamber by simple constitution without the need of a remote chamber or an exclusive microwave source or the like. SOLUTION: The plasma processing equipment 1 turns a prescribed gas supplied into the processing chamber 5 into plasma and executes plasma processing to a body G to be processed arranged inside the processing chamber 5 by propagating microwaves propagated to a waveguide 35 to a dielectric 46 arranged on the inner surface of the processing chamber 5. A space part 66 surrounded by a partition wall 65 composed of a dielectric material at least partially is formed inside the waveguide 35, and a cleaning gas flow path 61 for supplying a cleaning gas through the space part 66 to the processing chamber 5 is provided. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008098474(A) 申请公布日期 2008.04.24
申请号 JP20060279635 申请日期 2006.10.13
申请人 TOKYO ELECTRON LTD;TOHOKU UNIV 发明人 HIRAYAMA MASAKI;OMI TADAHIRO;KITAMURA MASAYUKI;MURATA HITOSHI
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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