| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing method capable of suppressing the generation of a scratch. SOLUTION: A polishing method comprises the step of making a metal film formed on a semiconductor substrate be in contact with a polishing pad adhered onto a rotation table, the step of polishing the metal film which is in contact with the polishing pad by rotating the rotation table, supplying polishing slurry onto the polishing pad, the step of collecting the used polishing slurry containing a metal component used in the metal film polishing step, the step of measuring the zeta potential of the collected used polishing slurry, and the step of controlling the amount of the polishing slurry to be supplied onto the polishing pad so that a measurement value obtained in the zeta potential measuring step is within a predetermined range. COPYRIGHT: (C)2008,JPO&INPIT |
