Insulated gate semiconductor device and method for manufacturing same

摘要

In an insulated gate semiconductor device ( 1 ) having an N^- type base region ( 11 ), P⁺ type collector regions ( 12 ), P type base regions ( 13 ), and N⁺type emitter regions ( 14 ), an N⁺ type collector-short region ( 15 ) which extends toward the N^- type base region ( 11 ) farther than the P⁺ type collector regions ( 12 ) is formed in the lower surface of the N^- type base region ( 11 ), and a P⁺ type semiconductor region ( 16 ) is formed between the N⁺ type collector-short region ( 15 ) and the N^- type base region ( 11 ).