| 摘要 |
A HEMT has a substrate ( 2 ), buffer layer ( 4 ), channel layer ( 8 ), spacer layer ( 10 ), delta doped layer ( 12 ), Schottky barrier layer ( 14 ) and cap layer ( 18 ) and metal layer ( 20 ), the latter forming a Schottky barrier with the underlying semiconductor. The channel may be of GaInAs and the barrier ( 4 ), spacer ( 10 ) and Schottky barrier layers ( 14 ) may be of AlInAs. An additional thin layer for example of GaAs is added between the Schottky barrier layer ( 14 ) and metallic layer ( 18 ) to enhance the Schottky barrier height without creating excessive defects.
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