发明名称 |
Nonvolatile memory devices and methods of fabricating the same |
摘要 |
A method of fabricating a nonvolatile memory device includes forming at least one insulating layer on at least one of a semiconductor substrate and a layer including a semi-conductive material, and performing a plasma process using fluorine on the semiconductor. In some cases, an interface between the insulating layer and the semiconductor substrate includes fluorine.
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申请公布号 |
US2008093657(A1) |
申请公布日期 |
2008.04.24 |
申请号 |
US20070653346 |
申请日期 |
2007.01.16 |
申请人 |
SON HO-MIN;HYUNG YONG-WOO;JANG WON-JUN;JEE JUNG-GEUN;KIM HYOENG-KI |
发明人 |
SON HO-MIN;HYUNG YONG-WOO;JANG WON-JUN;JEE JUNG-GEUN;KIM HYOENG-KI |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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