| 摘要 |
<p>Disclosed is a thin film transistor substrate comprising a semiconductor layer (33) of a thin film transistor and source-drain electrodes (28, 29). The source-drain electrodes (28, 29) are composed of layers (28a, 29a) which may be nitrogen-containing layers containing nitrogen or oxygen-nitrogen-containing layers containing nitrogen and oxygen, and thin films (28b, 29b) made of pure Cu or a Cu alloy. A part or all of nitrogen constituting the nitrogen-containing layers or a part of all of nitrogen or oxygen constituting the oxygen-nitrogen-containing layers is bonded with Si in the semiconductor layer (33) of the thin film transistor. The thin films (28b, 29b) made of pure Cu or a Cu alloy are connected with the semiconductor layer (33) of the thin film transistor through the nitrogen-containing or oxygen-nitrogen-containing layers (28a, 29a).</p> |
