| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an erasing method capable of eliminating a process for inputting a block address for every erasing operation time, thereby accelerating an erasing operation speed. <P>SOLUTION: The flash memory device includes: a start block address; an address register section for storing a last block address; a high voltage generator for outputting an erasing operation voltage necessary for an erasing operation; a block selection section for transmitting an erasing voltage to a relevant block according to an erase block address; an erase block address storing section for storing an erase block address output from a control logic circuit; and a block address comparator for comparing the last block address with the erase block address and outputting an erase progress signal which is its result value to the control logic circuit. Until the last block address and the erase block address are matched with each other, the control logic circuit erases an erase target block while increasing erase block addresses in accordance with the erase progress signal. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
