| 摘要 |
PROBLEM TO BE SOLVED: To improve dimensional accuracy of a gate pattern of a semiconductor device. SOLUTION: When a predetermined pattern is formed on a workpiece film, a laminated hard mask film wherein a first film, a second film and a third film are laminated in this order is formed on the workpiece film (S100), and a narrow line pattern is formed on the third film by using a resist film for a fine pattern with the second film as an etching stopper (S102), and then the resist film for the fine pattern is removed (S104). Continuously, exposure using the resist film again is executed (S106-S110), the second film, the first film and the workpiece film are selectively dry-etched in this order to form the workpiece film into the predetermined pattern (S112). Then the first film remaining on the workpiece film is removed (S114). COPYRIGHT: (C)2008,JPO&INPIT
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