| 摘要 |
PROBLEM TO BE SOLVED: To provide metal wiring of semiconductor element and its method for production which can prevent galvanic corrosion at a contact part of a wiring metal film with a barrier metal film made of different substance from the wiring metal film when damascence process is used for forming the metal wiring. SOLUTION: The metal wiring 29 of a semiconductor element comprises an insulating film in which a trench is formed, a galvanic corrosion prevention film 25B formed on the barrier metal film 24A, and a metal film burried in the trench in which the barrier metal film 24A and the galvanic corrosion prevention film 25B are formed. COPYRIGHT: (C)2008,JPO&INPIT |
