发明名称 METHOD OF PLASMA PROCESSING WITH IN-SITU MONITORING AND PROCESS PARAMETER TUNING
摘要 A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.
申请公布号 WO2007109252(A3) 申请公布日期 2008.04.17
申请号 WO2007US06879 申请日期 2007.03.20
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;RENAU, ANTHONY;SINGH, VIKRAM;GUPTA, ATUL;MILLER, TIMOTHY;AREVALO, EDWIN;PAPASOULIOTIS, GEORGE;JEON, YONG BAE 发明人 RENAU, ANTHONY;SINGH, VIKRAM;GUPTA, ATUL;MILLER, TIMOTHY;AREVALO, EDWIN;PAPASOULIOTIS, GEORGE;JEON, YONG BAE
分类号 H01L21/66 主分类号 H01L21/66
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