METHOD FOR FABRICATING CONDUCTING PLATES FOR A HIGH-Q MIM CAPACITOR

摘要

A method of forming one or more capacitors on or in a substrate (301) and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate (301), lining the trench with a first copper-barrier layer (303), and substantially filling the trench with a first copper layer (305A). The first copper layer (305A) is substantially chemically isolated from the substrate (301) by the first copper- barrier layer (303). A second copper-barrier layer (313A) is formed over the first copper layer (305A) and a first dielectric layer (307A) is formed over the second copper-barrier layer (313A). The dielectric layer (307A) is substantially chemically isolated from the first copper layer (305A) by the second copper-barrier layer (313A). A third copper-barrier layer (317A) is formed over the dielectric layer (307A) and a second copper layer (319A) is formed over the third copper-barrier layer (317A). The second copper layer (319A) is formed in a non-damascene process.