| 摘要 |
<p>It is possible to suppress CD irregularities in a plane in a mask pattern of an exposure mask based on sensitivity difference between the center portion and the peripheral portion of a mask blank, so as to match, for example, a half pitch 65 nm node in a semiconductor device. When resist liquid is dropped from a nozzle onto a substrate surface, a distance of substrate rotation center where the resist liquid has dropped and the rpm of the substrate are adjusted in the following range so as to suppress resist sensitivity increase at the position where the resist liquid has dropped on the substrate surface as compared to the other positions. The resist liquid which has dropped is spread to form a resist pool at the substrate central portion. The resist pool is spread to the peripheral portion of the substrate surface by centrifugal force and then dried to form a resist film.</p> |
