| 摘要 |
A magnetoresistive element and a magnetic memory are provided to decrease a write current required in magnetic switching, by enabling a write layer to cause magnetic switching with a small current, by improving vertical magnetic anisotropy and thermal stability of the write layer. A magnetoresistive element includes a magnetic free layer, a first non-magnetic layer and a second non-magnetic layer, and a magnetic pinned layer(11). The magnetic free layer includes a magnetic material and having a face-centered tetragonal crystalline structure. The orientation plane of the face-centered tetragonal crystalline structure is 001 . The magnetic free layer is intervened between the first and the second non-magnetic layer. The first and the second non-magnetic layer have one of a tetragonal crystalline structure and a cubic crystalline structure. The pinned magnetic layer is prepared on one side of the magnetic pinned layer and on the surface of the first non-magnetic layer, and includes a magnetic material. |
