| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming patterns by which a high-definition pattern having high aspect ratio can be formed on a substrate. <P>SOLUTION: The method of forming the pattern includes the steps of forming an underlayer film on a support; forming a silicon hard mask on the underlayer film; coating the hard mask with a chemically amplified positive resist composition, to form a first resist film; subjecting the first resist film to selective exposure via a first mask pattern and development, to form a first resist pattern; using the first resist pattern as a mask, and etching the hard mask to form a first pattern; coating the first pattern and underlayer film with a chemically amplified positive silicon resist composition, to form a second resist film; subjecting the second resist film to selective exposure via a second mask pattern and development, to form a second resist pattern; using the first pattern and the second resist pattern as masks, and etching the underlayer film to thereby form a second pattern. <P>COPYRIGHT: (C)2008,JPO&INPIT |
