CHEMICALLY AMPLIFIED RESIST MATERIAL AND PATTERN FORMING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To enhance dissolution contrast to exposure light having a wavelength of 300 nm band or below and to improve the resolution of a pattern.

SOLUTION: A pattern forming method is provided which comprises: forming a resist film 102 on a substrate 101 from a chemically amplified resist material containing fumaric acid substituted by a first acid-labile group which is released by an acid, an alkali-soluble polymer soluble in an alkaline solution, and a photoacid generator capable of generating an acid upon irradiation with light; selectively irradiating the formed resist film 102 with exposure light 104 to perform pattern exposure; and developing the resist film 102 subjected to the pattern exposure to form a resist pattern 102a.

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