| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method therefor which simplify manufacturing processes and suppress the diffusion of copper. SOLUTION: The semiconductor device 1 includes a semiconductor element layer 2, an interconnection layer 3, a polyimide layer 4, a first barrier layer 5, a copper interconnection 6, a second barrier layer 7, and an adhesive layer 8. The second barrier layer 7 is made of conductive TaN capable of suppressing the diffusion of copper and oxidation, and is formed continuously to cover the upper face and side faces of the copper interconnection 6. The adhesive layer 8 is made of conductive Al showing strong adhesion to a wire, and is formed to cover the upper face of the second barrier layer 7. COPYRIGHT: (C)2008,JPO&INPIT
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