Increasing memory supply voltage in response to an error

摘要

A memory circuit 100 comprises memory cells 412 with error detection circuitry 220 to detect errors in the memory cells. When an error is detected, control circuitry 230 increases the supply voltage to one or more of the memory cells. The circuit may use charge pump circuits 440 to increase the voltage. The voltage may be increased for a subset of the cells which includes the cell in which the error was detected. The voltage may be increased for cells which have been accessed. The error detection circuit may correct the error. The memory cells may be static random access memory cells. The memory may be the cache memory of a processor.