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发明名称
STRAINED SILICON ON INSULATOR (SSOI) STRUCTURE WITH IMPROVED CRYSTALLINITY IN THE STRAINED SILICON LAYER
摘要
申请公布号
EP1911084(A1)
申请公布日期
2008.04.16
申请号
EP20060800728
申请日期
2006.08.01
申请人
MEMC ELECTRONIC MATERIALS, INC.
发明人
SEACRIST, MICHAEL, R.;FEI, LU
分类号
H01L21/762
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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