NON-VOLATILE MEMORY DEVICE

摘要

A non-volatile memory device is provided to reduce worst on cell current by connecting first and second contacts with bit lines. A plurality of active patterns(200) are extended in one direction and are insulated electrically from each other. A plurality of first contacts(202) are electrically connected to the active patterns. A plurality of second contacts(204) are electrically connected to the active patterns. A plurality of word lines(206) are electrically connected to the active patterns between the first and second contacts. The word lines are extended in a perpendicular direction of the active patterns and are insulated electrically from each other. A first string selection line(208) is formed between the first contacts and the first outermost word line, is electrically connected to the active lines, and is extended in parallel to the active lines. A second string selection line(210) is formed between the second contacts and the second outermost word line, is electrically connected to the active lines, and is extended in parallel to the active lines.