METHOD FOR MANUFACTURING FAIL ANALYSIS SAMPLE FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a sample for analyzing a fail of a semiconductor device is provided to selectively etch and remove materials with different steps of wet etching according to etching selectivity of each material, and selectively remove a storage node using a solution having its own etching selectivity, while maintaining a cause of failure. A method for manufacturing a sample for analyzing a fail of a semiconductor device which is processed by passivation treatment, the method comprises the steps of: etching an interlayer dielectric and passivation films, and removing a metal wire line of the semiconductor device using a first wet etching for decapsulation; removing a polysilicon layer of a storage node of the semiconductor device using a second wet etching; and removing a Ti layer of the storage node using a third wet etching.