发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME |
摘要 |
<p>A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10). ® KIPO & WIPO 2008</p> |
申请公布号 |
KR20080025209(A) |
申请公布日期 |
2008.03.19 |
申请号 |
KR20087004026 |
申请日期 |
2006.08.22 |
申请人 |
NISSAN MOTOR CO., LTD.;ROHM CO., LTD. |
发明人 |
TANIMOTO SATOSHI;KAWAMOTO NORIAKI;KITOU TAKAYUKI;MIURA MINEO |
分类号 |
H01L29/51;H01L21/28;H01L29/739;H01L29/78 |
主分类号 |
H01L29/51 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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