SUBSTRATE, IN PARTICULAR MADE OF SILICON CARBIDE, COATED WITH A THIN STOICHIOMETRIC FILM OF SILICON NITRIDE, FOR MAKING ELECTRONIC COMPONENTS, AND METHOD FOR OBTAINING SUCH A FILM
摘要
申请公布号
EP1900014(A2)
申请公布日期
2008.03.19
申请号
EP20060792480
申请日期
2006.07.04
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE;UNIVERSITE PARIS-SUD (PARIS XI)
