| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a process for producing a liquid crystal display device having ptoycrystalline silicon thin-film transistors which are formed on a substrate, such as glass substrate, having a low distortion point and m.p. and have good operating characteristics and high reliability. SOLUTION: If the polycrystalline silicon films of active layers or the boundaries of these films and other films are subjected to a heat treatment (or activation) process for three hours at 600 deg.C after an electrical impurity is implanted to the polycrystal silicon films at the time of forming S/D, the S/D 106a, 106b of the active layers 108 decayed to the amorphous state thus far are recrystallized as shown in (e) and grow again to the crystal grains 110 of the polycrystal silicon. The electric resistance value thereof attains <=1kΩin sheet resistance and the characteristics sufficient as S/D are obtd.</p> |
