DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A display device and a method for manufacturing the same are provided to lower connection resistance of a thin film transistor and a cumulative capacitance and to prevent the short of a cumulative capacitance electrode by using the cumulative capacitance for maintaining a display signal applied to a pixel electrode through the thin film transistor. A thin film transistor includes a shield layer(11) formed on a substrate(10), a polysilicon layer(15), a gate dielectric(16) covering the polysilicon layer, and a gate electrode(17) formed on the gate dielectric. A buffer layer(13) is disposed on the shield layer to form the polysilicon layer. A cumulative capacitance(1C) includes a lower layer cumulative capacitance electrode(12) formed on the substrate, a lower cumulative capacitance layer, a cumulative capacitance electrode, an upper cumulative capacitance layer(16c) covering the cumulative capacitance electrode, and an upper cumulative capacitance electrode(18). The lower cumulative capacitance layer is contacted to the lower cumulative capacitance electrode through an opening unit of the buffer layer formed on the lower cumulative capacitance electrode. The cumulative capacitance electrode is formed on the lower cumulative capacitance electrode by disposing the lower cumulative capacitance layer. The cumulative capacitance electrode has a fine crystal poly silicon part having a crystal diameter smaller than the polysilicon layer on the buffer layer. The upper cumulative capacitance electrode is formed on the cumulative capacitance electrode by disposing the upper cumulative capacitance layer.