发明名称 |
DATA WRITING AND READING METHOD OF MEMORY DEVICE USING MAGNETIC DOMAIN WALL MOVING |
摘要 |
An information recording and reading method of an information storage device using domain wall movement is provided to improve the endurance and reduce the size of the information storage device. An information recording and reading method of an information storage device using domain wall movement comprises the steps: placing a first domain(11) which has a predetermined recording spin direction, on a writing track region being in contact with an intermediate layer; self-rotating the intermediate layer to have the same spin direction with the first domain; and forming a second domain(12) which has the same spin direction as the first domain, on an information storage track being in contact with the intermediate layer.
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申请公布号 |
KR20080024902(A) |
申请公布日期 |
2008.03.19 |
申请号 |
KR20060089649 |
申请日期 |
2006.09.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM CHEE KHENG;KIM, EUN SIK |
分类号 |
G11B5/02;G11B5/09 |
主分类号 |
G11B5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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