| 摘要 |
PROBLEM TO BE SOLVED: To taper at least the upper side of a via without giving any damage in a preceding via dual damscene process. SOLUTION: An interlayer insulation film 2 is formed on a conductor layer 1, a via 3 for the conductor layer 1 is formed in the interlayer insulation film 2, and then the via 3 is filled with a filler 7. The filler 7 is etched at lower etching rate than the interlayer insulation film 2, so as to form a wiring groove 6 in the interlayer insulation film 2, and at the same time, the upper side 5 of the via 3 is tapered. Then, a conductor film 8 is formed to bury the via 3 and the wiring groove 6, and a surface where the conductor film 8 is formed is flattened and embedded wiring, is formed. COPYRIGHT: (C)2008,JPO&INPIT
|
