| 摘要 |
A method is provided for making a semiconductor device, which comprises (a) providing a semiconductor structure comprising a top gate ( 228 ) and a bottom gate ( 240 ); (b) creating first ( 251 ), second and third ( 252 ) openings in the semiconductor structure, wherein the first opening exposes a portion of the bottom gate; (c) filling the first, second and third openings with a conductive material, thereby forming source ( 258 ) and drain ( 260 ) regions in the second and third openings and a conductive region ( 253 ) in the first opening; and (d) forming an electrical contact ( 278 ) to the conductive region.
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