| 发明名称 |
SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SEMICONDUCTOR THIN FILM, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR, AND MANUFACTURING DEVICE OF SEMICONDUCTOR THIN FILM |
| 摘要 |
A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.
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| 申请公布号 |
US2008048187(A1) |
申请公布日期 |
2008.02.28 |
| 申请号 |
US20070836312 |
申请日期 |
2007.08.09 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
TAKEGUCHI TORU;YURA SHINSUKE |
| 分类号 |
H01L29/06;G21K5/00;H01L21/20;H01L21/336 |
主分类号 |
H01L29/06 |
| 代理机构 |
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