| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light take-out efficiency in a nitride semiconductor light emitting diode element including a stripe protrusion/recess structure. <P>SOLUTION: The nitride semiconductor light emitting diode 10 comprises: a transparent substrate 11 having a stripe protrusion/recess structure on the surface; and a nitride semiconductor layer N formed to fill the protrusion/recess structure. The nitride semiconductor layer N has a refractive index higher than that of the transparent substrate 11, and includes a light emitter. When the nitride semiconductor light emitting diode 10 is viewed from the upper surface, outline of the nitride semiconductor layer N does not have a linear portion which makes an angle in the range of 80-100° with the longitudinal direction of the protrusion/recess structure. Since the nitride semiconductor light emitting diode 10 has high emission efficiency, it can be employed suitably as a light source for an illuminator. <P>COPYRIGHT: (C)2008,JPO&INPIT |
