发明名称 SEMICONDUCTOR MEMORY DEVICE WHERE WRITE AND READ DISTURBANCES HAVE BEEN IMPROVED
摘要 A data write transfer gate and a write driver transistor are connected to a data latch circuit for storing data, thereby producing a write data path. The data path is controlled by a word line and a data write bit line. In addition, a read drive transistor and a read transfer gate are connected to the latch circuit, thereby producing a read data path. The data path is controlled by a word line, a read bit line, and the data in the data latch circuit.
申请公布号 US2008049484(A1) 申请公布日期 2008.02.28
申请号 US20070828593 申请日期 2007.07.26
申请人 SASAKI TAKAHIKO 发明人 SASAKI TAKAHIKO
分类号 G11C5/00 主分类号 G11C5/00
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