| 摘要 |
A nitride semiconductor light emitting element having a laminate S made of a semiconductor crystal layer, wherein the laminate S includes an n-type layer 2, a light emitting layer 3 and a p-type layer 4. The p-type layer 4 has a p-type contact layer 42 to be in contact with the p-side electrode P 2. The p-type contact layer 42 comprises a first contact layer 42 a and a second contact layer 42 b. The first contact layer 42 a is in contact with the p-side electrode P 2 on one surface and in contact with the second contact layer 42 b on the other surface. The first contact layer 42 a is made of Al<SUB>x1</SUB>In<SUB>y1</SUB>Ga<SUB>z1</SUB>N (0<x1<=1, 0<=y1<=1, 0<=z1<=1), and the second contact layer 42b is made of Al<SUB>x2</SUB>In<SUB>y2</SUB>Ga<SUB>z2</SUB>N (0<=x2<=1, 0<=y2<=1, 0<=z2<=1). 0<=x2<x1, 0<=y1<=y2, and the first contact layer 42 a has a thickness of 0.5 nm-2 nm. By this constitution, the contact resistance between the p-type contact layer and the p-side electrode is reduced, and a nitride semiconductor light emitting element showing a lower operating voltage and reduced heat generation problem can be provided.
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