| 发明名称 |
METHOD FOR FABRICATING METALLIC BIT-LINE CONTACTS |
| 摘要 |
A memory cell and method of forming the same is provided. To make contact between a bit line and a select transistor of a dynamic memory unit on a semiconductor wafer, a contact hole is filled with a metal or a metal alloy. A liner layer may be introduced between the semiconductor substrate and the metal filling. The semiconductor substrate has a doped region in the contact hole.
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| 申请公布号 |
US2008048229(A1) |
申请公布日期 |
2008.02.28 |
| 申请号 |
US20070929215 |
申请日期 |
2007.10.30 |
| 申请人 |
STAUB RALF;AMON JURGEN;URBANSKY NORBERT |
发明人 |
STAUB RALF;AMON JURGEN;URBANSKY NORBERT |
| 分类号 |
H01L21/28;H01L27/108;H01L21/285;H01L21/3205;H01L21/60;H01L21/768;H01L21/8242;H01L23/52 |
主分类号 |
H01L21/28 |
| 代理机构 |
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