STORAGE ELEMENT, MEMORY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

A storage element is provided with a first electrode, a second electrode, and a resistance changing film (2) which is arranged between the first electrode and the second electrode to be connected with the both electrodes and changes a resistance value based on a voltage between the both electrodes. The resistance changing film (2) includes a layer (2a) composed of Fe₃O₄, and a layer (2b) composed of a spinel-type oxide expressed as Fe₂O₃ or MFe₂O₄ (M is a metal element other than Fe). The layer (2a) composed of Fe₃O₄ is formed thicker than the layer (2b) composed of Fe₂O₃ or the spinel-type oxide.