| 摘要 |
<p>A method for forming a pattern using a hard mask is provided to prevent generation of foreign substances by forming a strained layer between a tungsten layer and an amorphous carbon layer in a hard mask wherein the strained layer is formed by a surface treatment. A multilayer hard mask(32) is formed on an etch target layer(31), including a tungsten layer(32B) and an amorphous carbon layer(32D) wherein a strained layer(32C) formed by partially straining the tungsten layer is interposed between the tungsten layer and the amorphous layer. The hard mask is etched. The etch target layer is etched. The multilayer hard mask can be formed by the following steps. The tungsten layer is formed. A surface treatment process is performed on the tungsten layer to form the strained layer. The amorphous carbon layer is formed on the strained layer.</p> |
